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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY77, BCY78 BCY79 TO-18
Complementary BCY58/59
ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 UNIT V V V mA mA mW W deg C
VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 45 Collector -Emitter Voltage VEBO 5.0 5.0 5.0 Emitter -Base Voltage IC 100 200 200 Collector Current Continuous IB 50 50 50 Base Current Continuous PD 600 Power Dissipation@ Ta=25 degC 1.0 @ TC=45 deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-a) 450 Junction to Ambient in Free Air Rth(j-c) 150 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >60 >32 Collector -Emitter Voltage VEBO IE=1uA, IC=0 >5.0 >5.0 Emitter-Base Voltage ICES VCE=VCE max,VBE=0 <100 <100 Collector-Cut off Current VCE=50V, VBE=0 <20 VCE=25V, VBE=0 <20 VCE=35V, VBE=0 TA=150 deg C VCE=60V, VBE=0 VCE=25V, VBE=0 VCE=35V, VBE=0 ICEX VCE=VCE, max VBE=0.2V, Ta=100 deg C IEBO VEB=4V, IC=0 VBE(on) IC=10uA, VCE=5V IC=2mA, VCE=5V IC=10mA,VCE=1V IC=50mA,VCE=1V (2) IC=100mA,VCE=1V (1)
K/W K/W BCY79 UNIT >45 V >45 V >5.0 V <100 nA .nA nA <20 nA
<10 <20 <20
<10 <20 <20 TYP 0.55 0.6 to 0.75 TYP 0.68 TYP 0.72 TYP 0.75
.<10 <20 <20
uA uA uA uA nA V V V V V
Emitter Cut off Current Base Emitter on Voltage
Continental Device India Limited
Data Sheet
Page 1 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) VBE(Sat) IC=10mA,IB=0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V
BCY77-79 VALUE <0.25 <0.80 <0.80 0.60-0.85 0.70-1.2 0.70-1.2 TYP140 >30 >40 >100 120-220 180-310 250-460 380-630 >80 120-400 160-630 240-1000 >40 >45 >60 >60 >40 >45 >60 125-250 175-350 250-500 350-700 1.6-4.5 2.5-6.0 3.2-8.5 TYP 7.5 TYP1.5 TYP2.0 TYP2.0 TYP 3.0 <30 <50 <60 <100
UNIT V V V V V V
Base Emitter Saturation Voltage
DC Current
Only BCY78/79 IC=2mA, VCE=5V
Only BCY78/79 IC=10mA, VCE=1V
Only BCY78/79 IC=100mA, VCE=1V (1)
Only BCY78/79 IC=50mA, VCE=1V (2)
Small Signal Current Gain
hfe
IC=2mA,VCE=5V, f=1kHz
Input Impedance
hie
Only BCY78/79 IC=2mA,VCE=5V, f=1kHz
Voltage Feedback Ratio
hre
Only BCY78/79 IC=2mA,VCE=5V, f=1kHz
Output Admittance
hoe
Only BCY78/79 IC=2mA,VCE=5V, f=1kHz
Only BCY78/79
7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 10
kohms
X10-4
umhos
Continental Device India Limited
Data Sheet
Page 2 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN NF VCE=5V, IC=0.2mA Noise Figure RS=2khoms, f=1kHz, B=200Hz ft VCE=5V,IC=10mA, f=100MHz Transition Frequency Ccbo VCB=10V,IE=0, f=1MHz Collector base Capacitance Cebo VEB=0.5V,IC=0, f=1MHz Emitter base Capacitance
BCY77-79 TYP <6.0
MAX
UNIT dB
TYP180 <7.0 <15
MHz pF pF
SWITCHING CHARACTERISTICS BCY77/78/79 Delay time Rise time Turn on time Storage time Fall time Turn off time BCY78/79 Delay Time Rise Time Turn-on time Storage Time Fall time Turn-0ff time
td tr ton ts tf toff
IC=10mA, IB1=IB2=1mA VBB=3.6V, R1=R2=5kohms RL=990 ohms
-
35 50 400 80 -
150 800
ns ns ns ns ns ns
td tr ton ts tf toff
IC=100mA, IB1=1B2=10mA R1=500 ohms,R2=700 ohms RL=98 ohms, VBB=5V
-
5.0 50 250 200 -
150 800
ns ns ns ns ns ns
BCY77 td Delay Time tr IC=50mA, IB1=1B2=5mA Rise Time ton R1=1kohms,R2=1.3kohms Turn-on time ts RL=195 ohms, VBB=4.7V Storage Time tf Fall time toff Turn-0ff time (1) ONLY BCY78/79 (2) ONLY BCY77 Pulse Test : Pulse Width=300us, Duty Cycle=2%
-
15 50 300 150 -
150 800
ns ns ns ns ns ns
Continental Device India Limited
Data Sheet
Page 3 of 4
TO-18 Metal Can Package
A B DIM A B C D E F G H J K L MIN MA X 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 -- 0.76 -- 1.27 -- 2.97 0.91 1.17 0.71 1.21 12.70 -- 45 DE G
C
G
2 K 1 H L J D 3 F
3
2
1
PIN CONFIGU RATION 1. EMITTER 2. BASE 3. COLLECTOR
Packing Detail
PACKAGE TO-18 STANDARD PACK Details Net Weight/Qty 1K/polybag 350 gm/1K pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 5.0K OUTER CARTON BOX Size Qty Gr Wt 34 kgs 17" x 15" x 13.5" 80.0K
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
Continental Device India Limited
Data Sheet Page 4 of 4
All diminsions in mm.
E

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